Neuromorphic (Brain-like) Nanoelectronics Devices
The demand for energy-efficient and intelligent computing is growing, yet traditional hardware struggles with adaptability and power constraints. Neuromorphic nanoelectronics replicate brain-like synaptic processing, enabling low-power, real-time computation. These devices will revolutionize edge AI, robotics, and decentralized intelligence by fostering self-learning and adaptive systems that operate independently of massive data centers.
Development of Ultrathin and High-Performing Memory for Neuromorphic and in-material Processing (PIM)
Traditional memory faces limitations in power efficiency and scalability. Ultrathin ferroelectric memory offers non-volatile, high-speed, and energy-efficient data storage, enabling in-memory computing and ultra-fast AI-driven processing. By allowing compact, low-power AI hardware, this technology will reshape neuromorphic computing, edge intelligence, and ultra-dense storage, pushing beyond Moore’s Law.
Quest of Ultrafast Optoelectronic Devices for Advanced Applications
Modern AI, autonomous systems, and high-speed communication demand faster, more efficient light-based computing and sensing technologies. Ultrafast photodetectors, leveraging pyro-phototronic and piezo-phototronic effects, achieve nanosecond response times—critical for real-time optical processing, secure communication, and event-driven perception. These advancements will drive 6G networks, AI vision, and next-generation imaging, making technology more responsive and intelligent.
Revealing Optoelectronic Intraction at Nanoscale
We employ advanced scanning probe techniques, including Kelvin Probe Force Microscopy (KPFM), Electrostatic Force Microscopy (EFM), and Conductive Atomic Force Microscopy (cAFM), to visualize local potential variations induced by light and electric fields. These investigations provide critical insights into nanoscale electrodynamic and optoelectronic interactions, revealing their role in neuromorphic memory, charge transport, and adaptive photonic-electronic systems. By exploring ferroelectric polarization dynamics and topographic healing effects, we gain a deeper understanding of material behavior under controlled external stimuli. Probing nanoscale charge dynamics, polarization effects, and optoelectronic interactions provides key insights into device scaling, material behavior, and functionality—crucial for neuromorphic memory, adaptive electronics, and next-generation nanodevices.
Advancing Optoelectronics and Ultrafast Sensing for Complex Systems
We explore cutting-edge nonlinear optoelectronics, ultrafast thermal sensing, and advanced material engineering to drive the next generation of intelligent technologies. Our research leverages super-linear responses in phototransistors to enhance light-matter interactions, enabling breakthroughs in solar energy, biological systems, and chemical processes. By integrating an ultrafast AI-in-one platform that seamlessly combines sensing, processing, and memory, we develop high-speed, energy-efficient solutions for real-time applications. Additionally, our novel proximity oxidation technique enables the fabrication of ultrasmooth oxide films, enhancing material stability and performance. These innovations are paving the way for future optoelectronic and AI-driven systems with enhanced precision, adaptability, and efficiency.
Broken Symmetry Driven Unusual Properties in Centrosymmetric Materials
Our research investigates the flexoelectric effect as a powerful mechanism to tune fundamental physics properties in centrosymmetric materials, enabling novel functionalities beyond conventional limitations. By harnessing strain-gradient engineering, we develop ultrafast obstacle sensors and strain-mediated pattern recognition systems, paving the way for adaptive and intelligent optoelectronic technologies.
Advanced Materials Characterization and Devices
